Features: ·TrenchFET® Power MOSFET·PWM Optimized·100% Rg TestedApplication·High-Side DC/DC− Desktop− Server·DDR DC/DC ConverterSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Ga...
SUD50N03-16P: Features: ·TrenchFET® Power MOSFET·PWM Optimized·100% Rg TestedApplication·High-Side DC/DC− Desktop− Server·DDR DC/DC ConverterSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 U...
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| ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
|
Parameter |
Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Currenta | TC = 25 | ID | 37 | A |
| TA = 25 | 15 | |||
|
TA = 100 |
10.6 | |||
| Pulsed Drain Current | IDM | 40 | ||
| Continuous Source Current (Diode Conduction)a |
IS |
5 | ||
| Avalanche Current | IAS | 25 | ||
| Single Pulse Avalanche Energy | L = 0.1 mH | EAS | 31.25 | mJ |
| Maximum Power Dissipationa | TC = 25 | PD | 40.8 | W |
| TA = 25 | 6.5a | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | ||