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SUD50N06-09L

MOSFET 60V 50A 136W Logic Level

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SeekIC No. : 00166859 Detail

SUD50N06-09L: MOSFET 60V 50A 136W Logic Level

SUD50N06-09L Data Sheet

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Part Number:
SUD50N06-09L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 9 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 9 mOhms
Package / Case : TO-252-3


Features:

` TrenchFET® Power MOSFET
` 175 Junction Temperature


Application

· Automotive
   - ABS
   - Motor Drives
   - Fuel Injection


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Gate-Source Voltage VGS ±20

 V

Continuous Drain Current(TJ = 175)b TC = 25 ID 50 A
TC = 100 50a
Pulsed Drain Current IDM 100
Continuous Source Current (Diode Conduction)

IS

50a

Avalanche Current IAR 50
Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 125 mJ
Maximum Power Dissipationa TC = 25 PD 100 W
TA = 25 3b, 8.3b, c
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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