Features: ` TrenchFET® Power MOSFET` 175 Junction TemperatureApplicationAutomotive and IndustrialSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 175)b TC = 25 ID 63c A TC = 125 36...
SUD50N06-12: Features: ` TrenchFET® Power MOSFET` 175 Junction TemperatureApplicationAutomotive and IndustrialSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-S...
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| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Current (TJ = 175)b | TC = 25 | ID | 63c | A |
| TC = 125 | 36 | |||
| Pulsed Drain Current | IDM | 100 | ||
| Continuous Source Current (Diode Conduction) | IS | 63c | ||
| Avalanche Current, Single Pulse | IAS | 35 | ||
| Avalanche Energy | L = 0.1 mH | EAS | 61 | mJ |
| Maximum Power Dissipation | TC = 25 | PD | 107b | W |
| TA = 25 | 3a | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | ||