MOSFET 60V 50A 136W
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
| Resistance Drain-Source RDS (on) : | 15 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252-3 | Packaging : | Reel |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
|
Parameter |
Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | -60 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Current (TJ = 175) |
TC = 25 | ID | -50d | A |
| TC = 125 | -39 | |||
| Pulsed Drain Current | IDM | -80 | ||
| Avalanche Current | IAR | -50 | ||
| Repetitive Avalanche Energya | L = 0.1 mH | EAR | 125 | mJ |
| Power Dissipation | TC = 25 | PD | 136c | W |
| TA = 25 | 3b,c | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 175 | ||