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SUM110N04-04

MOSFET 40V 110A 250W

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SeekIC No. : 00164988 Detail

SUM110N04-04: MOSFET 40V 110A 250W

SUM110N04-04 Data Sheet

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Part Number:
SUM110N04-04
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 3.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-263-3
Resistance Drain-Source RDS (on) : 3.5 mOhms
Continuous Drain Current : 110 A


Features:

`TrenchFET®Power MOSFETS: 1.8-V Rated
` 175 Junction Temperature


Application

· Automotive
   - ABS
   - 12-V EPS
   - Motor Drivers


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID 110a A
TC = 125 107a
Pulsed Drain Current IDM 350
Avalanche Current L = 0.1 mH IAR 60
Repetitive Avalanche Energyb EAR 180 mJ
Maximum Power Dissipationb TC = 25 PD 250c W
TA = 25d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175



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