SUM110N05-06L Selling Leads, Price trend , Vishay/Siliconix, SUM110N05-06L DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00165636 Detail

SUM110N05-06L: MOSFET 55V 110A 158W

SUM110N05-06L Data Sheet

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Part Number:: SUM110N05-06L
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2025/12/23

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Recent History
What is this?

SUM110N02-03P evaluate
Features: `TrenchFET® Power MOSFET` 175 Junction Temperature`Optimized for Low-Side Synchronou...
SUM110N03-03 evaluate
Features: `TrenchFET®Power MOSFET` 175 Junction Temperature` Low Thermal Resistance Package` H...
SUM110N03-03P evaluate
Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test C...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	110 A
Resistance Drain-Source RDS (on) :	6 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263-3	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-263-3
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 6 mOhms

Features:

TrenchFET^® Power MOSFET
175 Junction Temperature
New Low Thermal Resistance Package

Application

Automotive and Industrial

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	55	V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J= 175)	T_C = 25	I_D	110	A
	T_C = 125		63
Pulsed Drain Current		I_DM	240
Avalanche Current		I_AR	60
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	E_AR	180	mJ
Maximum Power Dissipation	T_C = 25	P_D	158	W
	T_A = 25		3.7
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 175

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SUM110N05-06L

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