Features: TrenchFET® Power MOSFET175 Junction TemperatureNew Low Thermal Resistance PackageApplicationAutomotive and IndustrialPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 175) T...
SUM110N06-05L: Features: TrenchFET® Power MOSFET175 Junction TemperatureNew Low Thermal Resistance PackageApplicationAutomotive and IndustrialPinoutSpecifications Parameter Symbol Limit Unit Drain-S...
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Features: `TrenchFET® Power MOSFET` 175 Junction Temperature`Optimized for Low-Side Synchronou...
Features: `TrenchFET®Power MOSFET` 175 Junction Temperature` Low Thermal Resistance Package` H...
Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test C...

| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Current (TJ = 175) | TC = 25 | ID | 110 | A |
| TC = 125 | 82 | |||
| Pulsed Drain Current | IDM | 300 | ||
| Avalanche Current | IAR | 75 | ||
| Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 280 | mJ |
| Maximum Power Dissipation | TC = 25 | PD | 230 | W |
| TA = 25 | 3.75 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 | ||