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SUM110N06-3m4L

Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.5 V On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1640 A Drain...

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SUM110N06-3m4L: Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS...

SUM110N06-3m4L Data Sheet

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SUM110N06-3m4L
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Upload time: 2025/12/23

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Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Simulated
Data		 Measured
Data		 Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.5 V
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1640 A
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID =30 A 0.0028 0.0028 Ω
VGS = 10 V, ID =30 A, TJ = 125°C 0.0041
VGS = 10 V, ID = 30A, TJ = 175°C 0.0047
VGS = 4.5 V, ID = 20 A 0.0036 0.0033
Forward Voltagea VSD IS = 90A, VGS = 0 V 0.90 1 V
Dynamicb
Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 11010 12900 pF
Output Capacitance Coss 1088 1060
Reverse Transfer Capacitance Crss 645 700
Total Gate Chargec Qg VDS =30 V, VGS = 10 V, ID =110 A 224 200 nC
Gate-Source Chargec Qgs 50 50
Gate-Drain Chargec Qgd 33 33





Description

The attached spice model of SUM110N06-3m4L describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance of SUM110N06-3m4L is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of SUM110N06-3m4L is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SUM110N06-3m4L.



SUM110N06-3m4L N-Channel 60-V (D-S) 175C MOSFET




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