SUM60N04-12LT

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 9 mOhms
Package / Case : D2PAK-5


Features:

Temperature-Sense Diodes for Thermal Shutdown
TrenchFET^® Power MOSFET
175 Maximum Junction Temperature
ESD Protected: 2000 V
Logic-Level Low On-Resistance
Avalanche Rated
Low Gate Charge
Fast Turn-On Time
5-Lead D²PAK




Application

Automotive
Industrial




Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	40	V
Gate-Source Voltage		VGS	±20
VGS Clamp Current		IG	50	mA
Continuous Drain Current (TJ = 175)	Tc = 25	ID	60a	A
	Tc = 100		50
Avalanche Current		IAR	50
Repetitive Avalanche Energy	L = 0.1 mH	EAR	125	mJ
Source-to-Anode Voltage		VSA	100	V
Source-to-Cathode Voltage		VSC	100
Maximum Power Dissipationa	TC = 25	PD	110	W
	TA = 25d		3.75
Operating Junction and Storage Temperature Range		TJ, Tstg	55 to 175	C

Description

The SUM60N04-12LT is a 40-V n-channel, 15-m logic level MOSFET in a 5-lead D²PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology.

Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET.

The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes.