SUP70N03-09BP

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 9 mOhms
Package / Case : TO-220AB-3
Continuous Drain Current : 70 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±20
Continuous Drain Currentd (TJ = 175)	TC = 25	ID	70b	A
	TC = 125		50
Pulsed Drain Current		IDM	200
Avalanche Current		IAS	30
Single Pulse Avalanche Energya	L = 0.1 mH	EAS	61	mJ
Power Dissipation	TC = 25	PD	93b	W
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 175

Description

N-Channel 30-V (D-S) 175C MOSFET PWM Optimized SUP70N03-09BP