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SUP70N03-09P

MOSFET 30V 70A 93W

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SeekIC No. : 00164614 Detail

SUP70N03-09P: MOSFET 30V 70A 93W

SUP70N03-09P Data Sheet

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Part Number:
SUP70N03-09P
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 9 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB-3    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Resistance Drain-Source RDS (on) : 9 mOhms
Package / Case : TO-220AB-3
Continuous Drain Current : 70 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Drain-Source Voltage VDS ±30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current
(TJ = 175)b		 TC = 25 ID ±70a A
TC = 100 ±50
Pulsed Drain Current IDM ±180
Avalanche Current

IAR

±45

Repetitive Avalanche Energyb L = 0.1 mH EAR 101 mJ
Power Dissipation TC = 25 PD 93c W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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