Features: TrenchFET® Power MOSFETS100% Rg TestedRoHS CompliantApplicationDC/DC Conversion, Low-Side − Desktop PC − Notebook PCSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS ...
SUR50N025-05P: Features: TrenchFET® Power MOSFETS100% Rg TestedRoHS CompliantApplicationDC/DC Conversion, Low-Side − Desktop PC − Notebook PCSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 ...
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ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
|
Parameter |
Symbol |
Limit |
Unit | |
|
Drain-Source Voltage |
VDS |
25 |
V | |
|
Gate-Source Voltage |
VGS |
±20 |
V | |
|
Continuous Drain Currentd (TJ = 175) |
TC = 25 |
ID |
89 |
A |
|
TC = 125 |
75 | |||
|
TA = 25 |
36 | |||
|
TA = 70 |
30 | |||
|
Pulsed Drain Current |
IDM |
100 | ||
|
Continuous Source Current Diode Current |
TC = 25 |
IS |
55 | |
|
TA = 25 |
7.7 | |||
|
Avalanche Current |
L = 0.1 mH |
IAS |
45 | |
|
Single Pulse Avalanche Energya |
EAS |
101 |
mJ | |
|
Maximum Power Dissipationb |
TC = 25 |
PD |
83 |
W |
|
TC = 70 |
58 | |||
|
TA = 25b |
11.5 | |||
|
TA = 70b |
8.0 | |||
|
Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55 to 175 |
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