Features: TrenchFET® Power MOSFETPWM Optimized100% Rg TestedApplicationDC/DC Converters − High-Side, Desktop CPU CoreSynchronous RectifiersSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 ...
SUR50N03-12P: Features: TrenchFET® Power MOSFETPWM Optimized100% Rg TestedApplicationDC/DC Converters − High-Side, Desktop CPU CoreSynchronous RectifiersSpecifications ABSOLUTE MAXIMUM RATINGS (TC ...
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| ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage |
VDS |
30 |
V | |
| Gate-Source Voltage |
VGS |
±20 | ||
| Continuous Drain Currentd |
TC = 25 |
ID |
47 |
A |
|
TA= 25 |
17.5 | |||
|
TA = 100 |
12.4 | |||
| Pulsed Drain Current |
IDM |
40 | ||
| Avalanche Current |
IS |
5 | ||
| Single Pulse Avalanche Current |
L = 0.1 mH |
IAS |
30 |
|
| Repetitive Avalanche Energy |
EAS |
45 |
mJ | |
| Maximum Power Dissipationb |
TC = 25 |
PD |
46.8 |
W |
|
TA = 25 |
6.5a | |||
| Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55 to 175 |
||