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SW-338

Features: Very Low Power Consumption: 75 µW Low Insertion Loss: 0.5 dB High Isolation: 33 dB up to 2 GHz (SW-337, SW-338) 28 dB up to 2 GHz (SW-339) Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed Temperature Range: -40°C to +85°C Low Cost SOIC8 Plastic Package Tape and Ree...

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SeekIC No. : 004509649 Detail

SW-338: Features: Very Low Power Consumption: 75 µW Low Insertion Loss: 0.5 dB High Isolation: 33 dB up to 2 GHz (SW-337, SW-338) 28 dB up to 2 GHz (SW-339) Very High Intercept Point: 46 dBm IP3 Nano...

SW-338 Data Sheet

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Part Number:
SW-338
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

Very Low Power Consumption: 75 µW
Low Insertion Loss: 0.5 dB
High Isolation: 33 dB up to 2 GHz (SW-337, SW-338)
                           28 dB up to 2 GHz (SW-339)
Very High Intercept Point: 46 dBm IP3
Nanosecond Switching Speed
Temperature Range: -40°C to +85°C
Low Cost SOIC8 Plastic Package
Tape and Reel Packaging Available1



Pinout

Connection Diagram


Specifications

Parameter
Absolute Maximum1

Max. Input Power
0.05 GHz
0.5 2.0 GHz
Control Voltage
Operating Temperature
Storage Temperature

+27 dBm
+34 dBm
+5V, -8.5V
-40°C to +85°C
-65°C to +150°C

1. Operation of this device above any one of these parameters may cause permanent damage.


Description

M/A-COM's SW-337, SW-338 and SW-339 are GaAs MMIC SPDT terminated switches in a low cost SOIC 8-lead surface mount plastic package. The SW-338 is ideally suited for use where very low power consumption is required. Typical applications include transmit/receive switching, switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. The difference between the switches is in the pin configuration.

The SW-337, SW-338 and SW-339 are fabricated with monolithic GaAs MMICs using a mature 1-micron process. The process features full chip passivation for increased performance and reliability.




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