Features: `P1dB = 35dBm @ 6V`Three Stages of Gain: 37dB`802.11g 54Mb/s Class AB Performance`Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA`Active Bias with Adjustable Current`On-chip Output Power Detector`Low Thermal Resistance`Power up/down control < 1s`Attenuator step 20dB @ Vpc2 = 0VApplication·802....
SZM-2166Z: Features: `P1dB = 35dBm @ 6V`Three Stages of Gain: 37dB`802.11g 54Mb/s Class AB Performance`Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA`Active Bias with Adjustable Current`On-chip Output Power Detector`L...
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Parameters | Value | Unit |
VC3 Collector Bias Current (IVC3) |
1500 500 150 9.0 6 -40 to +85 |
mA mA mA V W |
****Max CW RF output Power for 50 ohm continuous long term operation |
30 | dBm |
Max CW RF Input Power for 50 ohm out-put load Max CW RF Input Power for 10:1 VSWR RF out load Max Storage Temperature Operating Junction Temperature (TJ) ESD Human Body Model |
26 5 +150 +150 Class 1B |
dBm dBm |
Sirenza Microdevices' SZM-2166Zis a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier SZM-2166Z is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
SZM-2166Z is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 2.3-2.7 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. SZM-2166Z features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. SZM-2166Z features a RoHS compliant and Green package with matte tin finish, designated by the "Z" suffix.