SZM-3166Z

Features: • P1dB =35dBm @ 5.2V• Three Stages of Gain: 35dB• 802.11g 54Mb/s Class AB Performance• Pout = 27dBm @ 2.5% EVM, Vcc 5.2V,900mA• Active Bias with Adjustable Current• On-chip Output Power Detector• Low Thermal Resistance• Power up/down contro...

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SeekIC No. : 004510732 Detail

SZM-3166Z: Features: • P1dB =35dBm @ 5.2V• Three Stages of Gain: 35dB• 802.11g 54Mb/s Class AB Performance• Pout = 27dBm @ 2.5% EVM, Vcc 5.2V,900mA• Active Bias with Adjustable Cu...

floor Price/Ceiling Price

Part Number:
SZM-3166Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• P1dB =35dBm @ 5.2V
• Three Stages of Gain: 35dB
• 802.11g 54Mb/s Class AB Performance
• Pout = 27dBm @ 2.5% EVM, Vcc 5.2V,900mA
• Active Bias with Adjustable Current
• On-chip Output Power Detector
• Low Thermal Resistance
• Power up/down control < 1s
• Attenuator Step 20dB @ Vpc2 = 0V
• Class 1C ESD Rating



Application

• 802.16 WiMAX Driver or Output Stage
• Fixed Wireless, WLL
• CPE Terminal Applications



Pinout

  Connection Diagram


Specifications

Parameters
Value
Unit
VC3 Collector Bias Current (IVC3)
1500
mA
VC2 Collector Bias Current (IVC2)
600
mA
VC1 Collector Bias Current (IVC1)
300
mA
**Device Voltage (VD)
9.0
V
Power Dissipation
6
W
Operating Lead Temperature (TL)
-40 to +85
*Max RF output Power for 50 ohm continuous long term operation
30
dBm
Max RF Input Power for 50 ohm output load
29
dBm
Max RF Input Power for 10:1 VSWR output load
2
dBm
Max Storage Temperature
+150
Operating Junction Temperature (TJ)
+150
ESD Human Body Model
Class 1C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one.

Bias conditions should also satisfy the following expression: IcqVcc < (TJ - TL) / RTH' j-l

Note: Icq in this equation is for the stage with the highest current

* With specified application circuit.
** No RF Drive





Description

Sirenza Microdevices' SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier SZM-3166Z is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

SZM-3166Z is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 3.3-3.6 GHz bands. SZM-3166Z can run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line optimization for other applications covering 3.5-3.8GHz. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by swtiching the second stage Power up/down control. SZM-3166Z features a RoHS compliant and Green package with matte tin finish, designated by the 'Z' suffix.




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