SZP-3026Z

Features: • P1dB = 33.5dBm @ 5V• 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA Pout = 27dBm @ 2.5% EVM, Vcc 6V, 590mA• On-chip Output Power Detector• Input Prematched to ~5 ohms• Proprietary Low Thermal Resistance Package Hand Solderable a...

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SZP-3026Z Picture
SeekIC No. : 004510733 Detail

SZP-3026Z: Features: • P1dB = 33.5dBm @ 5V• 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA Pout = 27dBm @ 2.5% EVM, Vcc 6V, 590mA• On-chip Output Power Detector...

floor Price/Ceiling Price

Part Number:
SZP-3026Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• P1dB = 33.5dBm @ 5V
• 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA Pout = 27dBm @ 2.5% EVM, Vcc 6V, 590mA
• On-chip Output Power Detector
• Input Prematched to ~5 ohms
• Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework
• Power up/down control < 1ms



Application

• 802.16 WiMAX Driver or Output Stage
• WLL



Pinout

  Connection Diagram


Specifications

Parameters Value Unit
VC1 Collector Bias Current (IVC1)
Device Voltage (Vcc)
Power Dissipation
Operating Lead Temperature (TL)
Max RF Input Power for 50 ohm output load
Max RF Input Power for 10:1 VSWR output load
Storage Temperature Range
Operating Junction Temperature (TJ)
ESD Human Body Model
1500
7.0
6
-40 to +85
27
23
40 to +150
+150
500
mA
V
W
ºC
dBm
dBm
ºC
ºC
V

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH' j-l




Description

Sirenza Microdevices' SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package.

This HBT amplifierSZP-3026Z is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 2.7-3.8GHz bands. SZP-3026Z can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. SZP-3026Z features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product features a RoHS Compliant and Green package with matte tin finish, designated by the 'Z' suffix.




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