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SZP-5026Z

Features: 􀂄` P1dB=33dBm @ 5V􀂄` 802.11a 54Mb/s Class AB Performance􀂄` POUT=25dBm @ 2.5% EVM, .9GHz, 5V, 680mA􀂄` On-Chip Input Power Detector􀂄` Internally Prematched Input and utput􀂄` Proprietary Low Thermal Resistance ackage􀂄` Power Up/...

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SZP-5026Z: Features: 􀂄` P1dB=33dBm @ 5V􀂄` 802.11a 54Mb/s Class AB Performance􀂄` POUT=25dBm @ 2.5% EVM, .9GHz, 5V, 680mA􀂄` On-Chip Input Power Detector􀂄` Internally ...

SZP-5026Z Data Sheet

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Part Number:
SZP-5026Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

􀂄` P1dB=33dBm @ 5V
􀂄` 802.11a 54Mb/s Class AB Performance
􀂄` POUT=25dBm @ 2.5% EVM, .9GHz, 5V, 680mA
􀂄` On-Chip Input Power Detector
􀂄` Internally Prematched Input and utput
􀂄` Proprietary Low Thermal Resistance ackage
􀂄` Power Up/Down Control<1s


Application

·􀂄 802.16 WiMAX Driver or Output tage
·􀂄 5GHz 802.11 WLAN and ISM pplications


Specifications

Parameter Rating Unit
VC1 Collector Bias Current (IVC1) 1500 mA
Device Voltage (VCC)* 6.0 V
Power Dissipation (PDISS) 6 W
Operating Lead Temperature (TL) -40 to +85
**Max RF output Power for 50 continuous
long term operation		 30 dBm
Max Modulated (***OFDM) RF Input
Power for 50 output load		 28 dBm
Max Modulated (***OFDM) RF Input
Power for 10:1 VSWR output load		 21 dBm
Storage Temperature Range -40 to +150
Operating Junction Temperature (TJ) +150
ESD Human Body Model 1000 V
Moisture Sensitivity Level MSL 1  
*No RF Drive
**With specified application circuit
***Modulation schemes include 802.11a/g, 802.16
Operation of this device beyond any one of these limits may cause permanent damage.
For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l


Description

RFMD's SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar ransistor (HBT) power amplifier. SZP-5026Z is designed with InGaP-on-GaAs device technology nd fabricated with MOCVD for an ideal combination of low cost and high reliability.

SZP-5026Z is specifically designed for use as a driver or final stage power mp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pre-matched on oth ports to simplify external application circuit design. SZP-5026Z features an input power etector, on/off power control, ESD protection, excellent overall robustness, and a and reworkable and thermally enhanced surface-mount SOF-26 packag




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