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Si1022R

Features: · Low On-Resistance: 1.25 · Low Threshold: 2.5 V· Low Input Capacitance: 30 pF· Fast Switching Speed: 25 ns· Low Input and Output Leakage· Miniature PackageApplication· Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.· Battery Operated Systems· Solid-Stat...

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SeekIC No. : 004489849 Detail

Si1022R: Features: · Low On-Resistance: 1.25 · Low Threshold: 2.5 V· Low Input Capacitance: 30 pF· Fast Switching Speed: 25 ns· Low Input and Output Leakage· Miniature PackageApplication· Drivers: Relays, S...

Si1022R Data Sheet

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Part Number:
Si1022R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low On-Resistance: 1.25 
· Low Threshold: 2.5 V
· Low Input Capacitance: 30 pF
· Fast Switching Speed: 25 ns
· Low Input and Output Leakage
· Miniature Package




Application

· Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Solid-State Relays




Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20
Continuous Drain Currenta TA = 25 ID 330 mA
TA = 85 240
Pulsed Drain Currenta IDM 650
Power Dissipationa TA = 25 PD 250 mW
TA = 85 130
Thermal Resistance, Maximum Junction-to-Ambienta RthJA 500 /W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150
Notes
c. Surface Mounted on FR4 Board, Power Applied for t10 sec.




Description

Si1022R N-Channel Enhancement-Mode MOSFET Transistor




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