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Si1025X

Features: ` High-Side Switching` Low On-Resistance: 4 ` Low Threshold: 2 V (typ)` Fast Switching Speed: 20 ns (typ)` Low Input Capacitance: 23 pF (typ)` Miniature Package` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.· Batte...

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SeekIC No. : 004489852 Detail

Si1025X: Features: ` High-Side Switching` Low On-Resistance: 4 ` Low Threshold: 2 V (typ)` Fast Switching Speed: 20 ns (typ)` Low Input Capacitance: 23 pF (typ)` Miniature Package` Gate-Source ESD Protection...

Si1025X Data Sheet

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Part Number:
Si1025X
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` High-Side Switching
` Low On-Resistance: 4
` Low Threshold: 2 V (typ)
` Fast Switching Speed: 20 ns (typ)
` Low Input Capacitance: 23 pF (typ)
` Miniature Package
` Gate-Source ESD Protection




Application

· Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Power Supply Converter Circuits
· Solid-State Relays




Pinout

Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID -200 -190 mA
TA = 85 -145 -135
Continuous Source Current (Diode Conduction)a IS -450 -380
Pulsed Drain Current IDM -650
Maximum Power Dissipationa TA = 25 PD 280 250 mW
TA = 85 145 130
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V





Description

Si1025X P-Channel 60-V (D-S) MOSFET




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