Features: ` Very Small Footprint` High-Side Switching` Low On-Resistance:N-Channel, 1.40 P-Channel, 4 ` Low Threshold: ±2 V (typ)` Fast Switching Speed: 15 ns (typ)` Gate-Source ESD ProtectionApplication· Replace Digital Transistor, Level-Shifter· Battery Operated Systems· Power Supply Converter C...
Si1029X: Features: ` Very Small Footprint` High-Side Switching` Low On-Resistance:N-Channel, 1.40 P-Channel, 4 ` Low Threshold: ±2 V (typ)` Fast Switching Speed: 15 ns (typ)` Gate-Source ESD ProtectionApplic...
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| Parameter | Symbol | N-Channel | P-Channel | Unit | |||
| 5 secs | Steady State | 5 secs | Steady State | ||||
| Drain-Source Voltage | VDS | 60 | −60 | V | |||
| Gate-Source Voltage | VGS | ±20 | |||||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 320 | 306 | -200 | -190 | A |
| TA = 85 | 230 | 220 | -145 | -135 | |||
| Continuous Source Current (Diode Conduction)a | IS | 450 | 380 | -450 | -380 | ||
| Pulsed Drain Currentb | IDM | 4.0 | -3.0 | ||||
| Maximum Power Dissipationa | TA = 25 | PD | 280 | 250 | 280 | 250 | W |
| TA = 85 | 145 | 130 | 145 | 130 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||||
| Gate-Source ESD Rating (HBM, Method 3015) | ESD | 2000 | V | ||||