Features: ` Low-Side Switching` Low On-Resistance: 5` Low Threshold: 0.9 V (typ)` Fast Switching Speed: 35 ns (typ)` 1.5-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoids, Lamps,ammers, Displays, Memories· Battery Operated Systems· Power Supply Converter Circuits· Load...
Si1034X: Features: ` Low-Side Switching` Low On-Resistance: 5` Low Threshold: 0.9 V (typ)` Fast Switching Speed: 35 ns (typ)` 1.5-V Operation` Gate-Source ESD ProtectionApplication· Drivers: Relays, Solenoid...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | ±5 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 190 | 180 | mA |
| TA = 85 | 140 | 130 | |||
| Continuous Source Current (Diode Conduction)a | IS | 450 | 380 | ||
| Pulsed Drain Current | IDM | 650 | |||
| Maximum Power Dissipationa | TA = 25 | PD | 280 | 250 | mW |
| TA = 85 | 145 | 130 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||
| Gate-Source ESD Rating (HBM, Method 3015) | ESD | 2000 | V | ||