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Si1035X

Features: ` Very Small Footprint` High-Side Switching` Low On-Resistance:N-Channel, 5 P-Channel, 8 ` Low Threshold: 0.9 V (typ)` Fast Switching Speed: 45 ns (typ)` 1.5-V Operation` Gate-Source ESD ProtectionApplication· Replace Digital Transistor, Level-Shifter· Battery Operated Systems· Power Su...

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SeekIC No. : 004489861 Detail

Si1035X: Features: ` Very Small Footprint` High-Side Switching` Low On-Resistance:N-Channel, 5 P-Channel, 8 ` Low Threshold: 0.9 V (typ)` Fast Switching Speed: 45 ns (typ)` 1.5-V Operation` Gate-Source ESD ...

Si1035X Data Sheet

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Part Number:
Si1035X
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

` Very Small Footprint
` High-Side Switching
` Low On-Resistance:
N-Channel, 5
P-Channel, 8
` Low Threshold: 0.9 V (typ)
` Fast Switching Speed: 45 ns (typ)
` 1.5-V Operation
` Gate-Source ESD Protection




Application

· Replace Digital Transistor, Level-Shifter
· Battery Operated Systems
· Power Supply Converter Circuits
· Load/Power Switching Cell Phones, Pagers




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 −20 V
Gate-Source Voltage VGS ±5 ±5
Continuous Drain Current (TJ = 150)a TA = 25 ID 190 180 -155 -145 A
TA = 85 140 130 -110 -105
Continuous Source Current (Diode Conduction)a IS 450 380 450 380
Pulsed Drain Current IDM 650 -650
Maximum Power Dissipationa TA = 25 PD 280 250 280 250 W
TA = 85 145 130 145 130
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150





Description

Si1035X Complementary N- and P-Channel 1.8-V (G-S) MOSFET




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