Features: · TrenchFET Power MOSFET· Thermally Enhanced SC-70 Package· PWM OptimizedApplication` Boost Converter in Portable Devices Low Gate Charge (3 nC)` Low Current Synchronous RectifierPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V ...
Si1426DH: Features: · TrenchFET Power MOSFET· Thermally Enhanced SC-70 Package· PWM OptimizedApplication` Boost Converter in Portable Devices Low Gate Charge (3 nC)` Low Current Synchronous RectifierPinoutSp...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 3.6 | 2.8 | A |
| TA = 85 | 2.6 | 2.1 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.3 | 0.8 | ||
| Pulsed Drain Current | IDM | 1.0 | |||
| Maximum Power Dissipationa | TA = 25 | PD | 1.6 | 1.0 | W |
| TA = 85 | 0.8 | 0.5 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | |||