Si1553DL

The Si1553DL is designed as one kind of complementary 2.5-V (G-S) MOSFET, Si1553DL has some points of absolute maximum ratings:(1)Drain-Source Voltage: +/- 20 V;(2)Gate-Source Voltage: +/- 12 V;(3)Continuous Drain Current (TJ = 150): +/- 0.70 A;(4)Pulsed Drain Current: +/- 1.0 A;(5)Continuous Source Current (Diode Conduction): +/-0.25 A;(6)Maximum Power Dissipation TA = 25: 0.27 or 0.30 W;(7)Maximum Power Dissipation TA = 85: 0.14 or 0.16 W;(8)Operating Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of Si1553DL can be summarized as:(1)Gate Threshold Voltage: +/- 0.6 V;(2)Gate-Body Leakage: +/- 100 nA;(3)Zero Gate Voltage Drain Current: +/- 1 uA;(4)On-State Drain Current: +/- 1.0 A;(5)Forward Transconductance: 0.8 or 1.5 s;(6)Diode Forward Voltage: 0.8 or 1.2 V. If you want to know more information about Si1553DL, please download the datasheet in www.seekic.com or www.chinaicmart.com .