Si1563EDH

Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 5 secs Steady State 5 secs Steady State Drain-Source Voltag...

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SeekIC No. : 004489932 Detail

Si1563EDH: Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Sym...

floor Price/Ceiling Price

Part Number:
Si1563EDH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· TrenchFET Power MOSFETS: 1.8-V Rated
· ESD Protected: 2000 V
· Thermally Enhanced SC-70 Package





Application

· Load Switching
· PA Switch
· Level Switch





Pinout

  Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 −20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 1.28 1.13 -1.00 -0.88 A
TA = 85 0.92 0.81 -0.72 -0.63
Continuous Source Current (Diode Conduction)a IS 0.61 0.48 -0.61 -0.48
Pulsed Drain Current IDM 4.0 -3.0
Maximum Power Dissipationa TA = 25 PD 0.74 0.57 0.30 0.57 W
TA = 85 0.38 0.30 0.16 0.3
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150





Description

Si1563EDH Complementary 20-V (D-S) Low Threshold MOSFET




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