Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 5 secs Steady State 5 secs Steady State Drain-Source Voltag...
Si1563EDH: Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Sym...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

| Parameter | Symbol | N-Channel | P-Channel | Unit | |||
| 5 secs | Steady State | 5 secs | Steady State | ||||
| Drain-Source Voltage | VDS | 20 | −20 | V | |||
| Gate-Source Voltage | VGS | ±12 | ±12 | ||||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 1.28 | 1.13 | -1.00 | -0.88 | A |
| TA = 85 | 0.92 | 0.81 | -0.72 | -0.63 | |||
| Continuous Source Current (Diode Conduction)a | IS | 0.61 | 0.48 | -0.61 | -0.48 | ||
| Pulsed Drain Current | IDM | 4.0 | -3.0 | ||||
| Maximum Power Dissipationa | TA = 25 | PD | 0.74 | 0.57 | 0.30 | 0.57 | W |
| TA = 85 | 0.38 | 0.30 | 0.16 | 0.3 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||||