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Si1912EDH

Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12...

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SeekIC No. : 004489945 Detail

Si1912EDH: Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Sym...

Si1912EDH Data Sheet

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Part Number:
Si1912EDH
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

· TrenchFET Power MOSFETS: 1.8-V Rated
· ESD Protected: 2000 V
· Thermally Enhanced SC-70 Package




Application

· Load Switching
· PA Switch
· Level Switch




Pinout

Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 1.28 1.3 A
TA = 85 0.92 0.81
Continuous Source Current (Diode Conduction)a IS 0.61 0.48
Pulsed Drain Current IDM 4
Maximum Power Dissipationa TA = 25 PD 0.74 0.57 W
TA = 85 0.38 0.30
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Si1912EDH N-Channel 20-V (D-S) MOSFET with Copper Leadframe




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