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Features: 100% Rg TestedPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 2.0 A TA = 70 1.6 Continuous Source Current (Diode Conduction)a IS 1.0 Pulsed Dra...

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SeekIC No. : 004489983 Detail

Si2308DS: Features: 100% Rg TestedPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25...

Si2308DS Data Sheet

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Part Number:: Si2308DS
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
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Upload time: 2025/12/25

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Recent History
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SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
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US $.14 - .29 / Piece

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SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Description

Features:

100% R_g Tested

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	60	V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J= 150)^a	T_A = 25	I_D	2.0	A
	T_A = 70		1.6
Continuous Source Current (Diode Conduction)^a		I_S	1.0
Pulsed Drain Current^b		I_DM	10
Power Dissipation^a	T_A = 25	P_D	1.25	W
	T_A = 70		0.80
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 150

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Si2308DS

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