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PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a, b TA = 25 ID -1.25 A TA = 100 -0.85 Avalanche Current L = 0.1 mH IAS -5 Pulsed Drain Current IDM -8 Power Di...

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Si2309DS: PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a, b TA = 25 ID -1.25 A TA...

Si2309DS Data Sheet

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Part Number:: Si2309DS
Supply Ability:: 5000

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Upload time: 2025/12/25

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SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Description

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	-60	V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J= 150)^{a, b}	T_A = 25	I_D	-1.25	A
	T_A = 100		-0.85
Avalanche Current	L = 0.1 mH	I_AS	-5
Pulsed Drain Current		I_DM	-8
Power Dissipation^a,b	T_A = 25	P_D	1.25	W
	T_A = 70		0.8
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 150

Description

Si2309DS P-Channel 60-V (D-S) MOSFET

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Si2309DS

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