Features: TrenchFET® Power MOSFETApplicationLoad SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a,b TA = 25 ID -3.5 -3.0 A TA = 70 -2.8 -2.4 Pul...
Si2311DS: Features: TrenchFET® Power MOSFETApplicationLoad SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS ±8...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -8 | V | ||
| Gate-Source Voltage | VGS | ±8 | |||
| Continuous Drain Current (TJ = 150)a,b | TA = 25 | ID | -3.5 | -3.0 | A |
| TA = 70 | -2.8 | -2.4 | |||
| Pulsed Drain Current | IDM | -10 | |||
| Continuous Source Current (Diode Conduction)a,b | IS | -0.8 | -0.6 | ||
| Maximum Power Dissipationa,b | TA = 25 | PD | 0.96 | 0.71 | W |
| TA = 70 | 0.62 | 0.46 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||