Si2321DS Selling Leads, Price trend, Si2321DS DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchFET® Power MOSFETSApplication· Load Switch· PA SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID -3.3 -2.9 A TA = 70 -2...

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SeekIC No. : 004489996 Detail

Si2321DS: Features: · TrenchFET® Power MOSFETSApplication· Load Switch· PA SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source...

Si2321DS Data Sheet

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Part Number:: Si2321DS
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/25

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Recent History
What is this?

SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Description

Features:

· TrenchFET^® Power MOSFETS

Application

· Load Switch
· PA Switch

Pinout

Connection Diagram

Specifications

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage		V_DS	-20		V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current (T_J = 150)^a	T_A= 25	I_D	-3.3	-2.9	A
	T_A = 70		-2.6	-2.3
Continuous Source Current (Diode Conduction)^a		I_S	-0.74	-0.59
Pulsed Drain Current^a		I_DM	-12
Maximum Power Dissipation^a	T_A = 25	P_D	0.89	0.71	W
	T_A = 70		0.57	0.45
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150
Gate-Source ESD Rating (HBM, Method 3015)		ESD	2000		V

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Si2321DS

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