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PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 1.5 1.15 A TA = 70 1.2 0.92 Avalanche Currentb L = 0.1 mH IAS 6 Single Avalanche Energ...

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SeekIC No. : 004490000 Detail

Si2328DS: PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 1....

Si2328DS Data Sheet

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Part Number:: Si2328DS
Supply Ability:: 5000

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SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

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Connection Diagram

Specifications

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage		V_DS	100		V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J = 150)^a	T_A = 25	I_D	1.5	1.15	A
	T_A= 70		1.2	0.92
Avalanche Current^b	L = 0.1 mH	I_AS	6
Single Avalanche Energy		E_AS	1.8		mJ
Continuous Source Current (Diode Conduction)^a		I_S	0.6		A
Pulsed Drain Current^a		I_DM	6		A
Maximum Power Dissipation^a	T_A = 25	P_D	1.25	0.73	W
	T_A = 70		0.8	0.47
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150

Description

Si2328DS N-Channel 100-V (D-S) MOSFET

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Si2328DS

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