Si2331DS Selling Leads, Price trend, Si2331DS DataSheet download, circuit diagram from SeekIC.com

Features: · P-Channel Vertical DMOS· Macro Model (Subcircuit Model)· Level 3 MOS· Apply for both Linear and Switching Application· Accurate over the -55 to 125°C Temperature Range· Model the Gate Charge, Transient, and Diode Reverse Recovery CharacteristicsDescriptionThe attached spice model descr...

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SeekIC No. : 004490001 Detail

Si2331DS: Features: · P-Channel Vertical DMOS· Macro Model (Subcircuit Model)· Level 3 MOS· Apply for both Linear and Switching Application· Accurate over the -55 to 125°C Temperature Range· Model the Gate Ch...

Si2331DS Data Sheet

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Part Number:: Si2331DS
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/25

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Product Details

Description

Features:

· P-Channel Vertical DMOS
· Macro Model (Subcircuit Model)
· Level 3 MOS
· Apply for both Linear and Switching Application
· Accurate over the -55 to 125°C Temperature Range
· Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS Si2331DS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance of Si2331DS is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network Si2331DS is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the Si2331DS.

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Si2331DS

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