Si2333DS Selling Leads, Price trend, Si2333DS DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchFET® Power MOSFETApplication· Load Switch· PA SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a,b TA = 25 ID -5.3 -4.1 A TA = 70 -...

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SeekIC No. : 004490003 Detail

Si2333DS: Features: · TrenchFET® Power MOSFETApplication· Load Switch· PA SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source ...

Si2333DS Data Sheet

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Part Number:: Si2333DS
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/25

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Recent History
What is this?

SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Description

Features:

· TrenchFET^® Power MOSFET

Application

· Load Switch
· PA Switch

Pinout

Connection Diagram

Specifications

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage		V_DS	-12		V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current (TJ = 150)^a,b	TA = 25	I_D	-5.3	-4.1	A
	TA = 70		-4.2	-3.3
Continuous Source Current (Diode Conduction)^a,b		I_S	-1.0	-0.6
Pulsed Drain Current		I_DM	-20
Maximum Power Dissipation^a,b	TA = 25	P_D	1.25	0.75	W
	TA = 70		0.8	0.48
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150
Gate-Source ESD Rating (HBM, Method 3015)		ESD	2000		V

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Si2333DS

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