SI3441DV

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.06 Ohms
Continuous Drain Current : - 3.5 A


Features:

• 3.5 A, 20 V. R_DS(ON) = 80 m @ V_GS = 4.5 V
                           R_DS(ON) = 110 m @ V_GS = 2.5 V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)


Application

• Battery management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
	Gate-Source Voltage	±8	V
ID	Drain Current Continuous                 (Note 1a)                        Pulsed	-3.5	A
		-20
PD	Maximum Power Dissipation                  (Note 1a)                                                               (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This P-Channel 2.5V specified MOSFET uses Fairchild's low voltage PowerTrench process. Si3441DV has been optimized for battery power management applications.