Features: TrenchFET® Power MOSFETApplicationLoad SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID −5.3 −4.0 A TA = 70 ...
Si3481DV: Features: TrenchFET® Power MOSFETApplicationLoad SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage ...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | −30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | −5.3 | −4.0 | A |
| TA = 70 | -4.2 | -3.2 | |||
| Pulsed Drain Current | IDM | -20 | |||
| Continuous Source Current (Diode Conduction)a | IS | -1.7 | -0.95 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.14 | W |
| TA = 70 | 1.3 | 0.73 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||