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Si3590DV

Features: · TrenchFET®Power MOSFET· Ultra Low rDS(on) N- and P-Channel for High Efficiency· Optimized for High-Side/Low-Side· Minimized Conduction LossesApplicationPortable Devices Including PDAs, Cellular Phones and PagersPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit...

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SeekIC No. : 004490174 Detail

Si3590DV: Features: · TrenchFET®Power MOSFET· Ultra Low rDS(on) N- and P-Channel for High Efficiency· Optimized for High-Side/Low-Side· Minimized Conduction LossesApplicationPortable Devices Including PDA...

Si3590DV Data Sheet

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Part Number:
Si3590DV
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· TrenchFET®Power MOSFET
· Ultra Low rDS(on) N- and P-Channel for High Efficiency
· Optimized for High-Side/Low-Side
· Minimized Conduction Losses




Application

Portable Devices Including PDAs, Cellular Phones and Pagers




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 3 2.5 -2 -1.7 A
TA = 70 2.3 2.0 -1.6 -1.3
Continuous Source Current (Diode Conduction)a IS 1.05 0.75 -1.05 -0.75
Pulsed Drain Current IDM 8 -8
Maximum Power Dissipationa TA = 25 PD 1.15 0.83 1.15 0.83 W
TA = 70 0.73 0.53 0.73 0.53
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Si3590DV N- and P-Channel 30-V (D-S) MOSFET




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