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Si3831DV

Features: · Low rDS(on) Symmetrical P-Channel MOSFET· Integrated Body Bias For Bi-Directional Blocking· 2.5- to 5.5-V Operation· Exceeds 2 kV ESD Protected· Solution for High-Side Battery Disconnect Switching (BDS)· Supports Battery Switching in Multiple Battery CellPhones, PDAs and PCS Products·...

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SeekIC No. : 004490177 Detail

Si3831DV: Features: · Low rDS(on) Symmetrical P-Channel MOSFET· Integrated Body Bias For Bi-Directional Blocking· 2.5- to 5.5-V Operation· Exceeds 2 kV ESD Protected· Solution for High-Side Battery Disconnec...

Si3831DV Data Sheet

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Part Number:
Si3831DV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low rDS(on) Symmetrical P-Channel MOSFET
· Integrated Body Bias For Bi-Directional Blocking
· 2.5- to 5.5-V Operation
· Exceeds 2 kV ESD Protected
· Solution for High-Side Battery Disconnect Switching (BDS)
· Supports Battery Switching in Multiple Battery CellPhones, PDAs and PCS Products
· Low Profile, Small Footprint TSOP-6 Package


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage, Source-Drain Voltagea VDS 7.0 to +7.0 V
Source-Body/Drain-Body/Gate-Body Voltage VSB, VDB, VGB 0.3 to 7.0
Continuous Drain Current (TJ = 150)a,b TA = 25 ID ±24 A
TA = 70 ±2.0
Body-Substrate Voltage VBSUB +7.0 to 0.3
Pulsed Drain-to-Source Currenta IDM ±8
Maximum Power Dissipationb TA = 25 PD 1.5 W
TA = 70 1.0
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



Description

The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction.Bi-directional blocking is facilitated by combining a 4-terminal symmetric p-channel MOSFET with a body bias selector circuit*. Circuit operation automatically biases the p-channel body to the most positive source/drain potential thereby maintaining a reverse bias across the diode present between the source/drain terminals. Off-state Si3831DV blocking characteristics are symmetric, facilitating bi-directional blocking for high-side battery switching in portable oducts.Gate drive is facilitated by negatively biasing the gate relative to the body potential. The off-state is achieved by biasing the gate to the most positive supply voltage or to the body potential. The Si3831DV is available in a 6-pin TSOP-6 package rated for the 25 to 85C commercial temperature range.




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