Features: · TrenchFET® Power MOSFET· PWM OptimizedApplication· DC/DC- HDD- Power Supplies· Portable Devices Such As Cell Phones, PDA,DSC, and DVCPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Cont...
Si3867DV: Features: · TrenchFET® Power MOSFET· PWM OptimizedApplication· DC/DC- HDD- Power Supplies· Portable Devices Such As Cell Phones, PDA,DSC, and DVCPinoutSpecifications Parameter Symbol 5 se...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -20 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -5.1 | -3.9 | A |
| TA = 85 | -3.7 | -2.8 | |||
| Pulsed Drain Current | IDM | -20 | |||
| Continuous Source Current (Diode Conduction)a | IS | -1.7 | -0.9 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.1 | W |
| TA = 85 | 1.0 | 0.6 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||