Features: · TrenchFET® Gen II Power MOSFET·100% Rg TestedApplication·High-Side DC/DC Conversion − Notebook − Desktop − Server·Notebook Logic DC/DC, Low-SidePinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V ...
Si4346DY: Features: · TrenchFET® Gen II Power MOSFET·100% Rg TestedApplication·High-Side DC/DC Conversion − Notebook − Desktop − Server·Notebook Logic DC/DC, Low-SidePinoutSpecifications...
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Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | −30 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 8 | 5.9 | A |
| TA = 70 | 6.5 | 4.7 | |||
| Pulsed Drain Current | IDM | 30 | |||
| continuous Source Current (Diode Conduction)a | IS | 2.2 | 1.20 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.31 | W |
| TA = 70 | 1.6 | 0.84 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||