Features: TrenchFET® Gen II Power MOSFETApplication· High-Side DC/DC Conversion− Notebook− Desktop− Server· Notebook Logic DC/DC, Low-SidePinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ...
Si4348DY: Features: TrenchFET® Gen II Power MOSFETApplication· High-Side DC/DC Conversion− Notebook− Desktop− Server· Notebook Logic DC/DC, Low-SidePinoutSpecifications Parameter S...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 11 | 8.0 | A |
| TA = 70 | 8.9 | 6.5 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 40 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.2 | 1.20 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.31 | W |
| TA = 70 | 1.6 | 0.84 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||