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Si4356DY

Features: · TrenchFET Power MOSFETS· Optimized for Low-Side Synchronous Rectifier Operation· 100 % RG TestedApplication· Buck Converter· Synchronous Rectifier- Secondary RectifierPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-So...

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SeekIC No. : 004490252 Detail

Si4356DY: Features: · TrenchFET Power MOSFETS· Optimized for Low-Side Synchronous Rectifier Operation· 100 % RG TestedApplication· Buck Converter· Synchronous Rectifier- Secondary RectifierPinoutSpecificatio...

Si4356DY Data Sheet

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Part Number:
Si4356DY
Supply Ability:
5000

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Product Details

Description



Features:

· TrenchFET Power MOSFETS
· Optimized for Low-Side Synchronous
  Rectifier Operation
· 100 % RG Tested


Application

· Buck Converter
· Synchronous Rectifier
- Secondary Rectifier


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 17 12 A
TA = 70°C 14 9
Pulsed Drain Current IDM ±50
Continuous Source Current (Diode Conduction)a IS 2.7 1.4
Maximum Power Dissipationa TA = 25°C PD 3.0 1.6 W
TA = 70°C 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C



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