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Si4378DY

Features: · Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology· Qg Optimized· 100% Rg TestedApplication· Synchronous Rectification· Point-Of-LoadPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gat...

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SeekIC No. : 004490258 Detail

Si4378DY: Features: · Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology· Qg Optimized· 100% Rg TestedApplication· Synchronous Rectification· Point-Of-LoadPinoutSpecifica...

Si4378DY Data Sheet

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Part Number:
Si4378DY
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology
· Qg Optimized
· 100% Rg Tested


Application

· Synchronous Rectification
· Point-Of-Load


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 25 19 A
TA = 70 20 13
Pulsed Drain Current(10 s Pulse Width) IDM 70
Continuous Source Current (Diode Conduction)a IS 2.9 1.3
Avalanche Current L = 0.1 mH IAS 40
Maximum Power Dissipationa TA = 25 PD 3.5 1.6 W
TA = 70 2.2 1  
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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