Features: · TrenchFET® Power MOSFETS· 100% Rg TestedApplication·Battery and Load Switching - Notebook Computers - Notebook Battery PacksPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS ±12 Con...
Si4405DY: Features: · TrenchFET® Power MOSFETS· 100% Rg TestedApplication·Battery and Load Switching - Notebook Computers - Notebook Battery PacksPinoutSpecifications Parameter Symbol 10 secs S...
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Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | −30 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -17 | -11 | A |
| TA = 70 | -13 | -9 | |||
| Pulsed Drain Current | IDM | -60 | |||
| continuous Source Current (Diode Conduction)a | IS | -2.9 | -1.30 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.6 | W |
| TA = 70 | 2.1 | 1.0 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||