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SI4408DY

MOSFET 20V 21A 3.5W

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SeekIC No. : 00166882 Detail

SI4408DY: MOSFET 20V 21A 3.5W

SI4408DY Data Sheet

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Part Number:
SI4408DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 4.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 4.5 mOhms


Features:

· TrenchFET Power MOSFET
· PWM Optimized for Fast Switching
· Low Switching Losses
· Low Gate Drive Losses
· 100% RG Tested


Application

Self-Driven Synchronous Rectification


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 21 14 A
TA = 70°C 17 11
Pulsed Drain Current(10 s Pulse Width) IDM 60
Continuous Source Current (Diode Conduction)a IS 2.9 1.3 A
Maximum Power Dissipationa TA = 25°C PD 3.5 1.6 W
TA = 70°C 2.2 1.0
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C



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