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SI4412ADY

MOSFET 30V 8A 2.5W

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SeekIC No. : 00165146 Detail

SI4412ADY: MOSFET 30V 8A 2.5W

SI4412ADY Data Sheet

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Part Number:
SI4412ADY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 24 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 24 mOhms
Continuous Drain Current : 8 A


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20 A
Continuous Drain Current (TJ = 150)a TA = 25 ID 8 5.8 A
Continuous Drain Current (TJ = 150)a TA = 70 ID 6.4 4.6 A
Pulsed Drain Current (10 s Pulse Width) IDM 30 30 A
Continuous Source Current (Diode Conduction)a IS 2.3 1.2 A
Maximum Power Dissipationa TA = 25 PD 2.5 1.3 W
Maximum Power Dissipationa TA = 70 PD 1.6 0.8 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 -55 to 150



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