Features: ·TrenchFET® Power MOSFET·100% Rg TestedApplication·Primary Side SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 3 2.3 A T...
Si4418DY: Features: ·TrenchFET® Power MOSFET·100% Rg TestedApplication·Primary Side SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 200 V ...
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Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 200 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 3 | 2.3 | A |
| TA = 70 | 2.1 | 1.6 | |||
| Pulsed Drain Current | IDM | 12 | |||
| Avalanch Current | L = 0.1 mH | IAS | 6 | ||
| Single Avalanche Energy (Duty Cycle 1%) | EAS | 1.8 | mJ | ||
| continuous Source Current (Diode Conduction)a | IS | 2.1 | 1.25 | A | |
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.5 | W |
| TA = 70 | 1.3 | 0.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||