Features: ·TrenchFET® Power MOSFETSPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID -12.6 -9.7 A TA = 70 -10.1 -7.7 Pulsed Drai...
Si4427BDY: Features: ·TrenchFET® Power MOSFETSPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS ±12 Cont...
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Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | −30 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -12.6 | -9.7 | A |
| TA = 70 | -10.1 | -7.7 | |||
| Pulsed Drain Current | IDM | -50 | |||
| continuous Source Current (Diode Conduction)a | IS | -2.5 | -1.3 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.5 | W |
| TA = 70 | 1.6 | 0.9 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||