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SI4429EDY

MOSFET 30V 13A 3W

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SeekIC No. : 00165584 Detail

SI4429EDY: MOSFET 30V 13A 3W

SI4429EDY Data Sheet

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Part Number:
SI4429EDY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 10.5 mOhms


Features:

· TrenchFET® Power MOSFET
· VGS Surge Protection to 18 V
· ESD Protected: 4000 V


Application

· Battery Switch
· Load Switch


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 -13.0 -9.4 A
TA = 70 -10.0 -7.5
Pulsed Drain Current IDM -50
Continuous Source Current (Diode Conduction)a IS -2.5 -1.3
Maximum Power Dissipationaa TA = 25 PD 3.0 1.5 W
TA = 70 1.9 0.9
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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