Position: Home  > All Categories> Integrated Circuits (ICs) > Si4434DY

Si4434DY

Features: ·PWM-OptimizedTrenchFET® Power MOSFET·100% Rg Tested·Avalanche TestedApplication·Primary Side Switch In:− Telecom Power Supplies− Distributed Power Architectures− Miniature Power ModulesPinoutSpecifications Parameter Symbol 10 secs Steady State Unit D...

product image

Si4434DY Picture
See larger image
SeekIC No. : 004490287 Detail

Si4434DY: Features: ·PWM-OptimizedTrenchFET® Power MOSFET·100% Rg Tested·Avalanche TestedApplication·Primary Side Switch In:− Telecom Power Supplies− Distributed Power Architectures− Min...

Si4434DY Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
Si4434DY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·PWM-OptimizedTrenchFET® Power MOSFET
·100% Rg Tested
·Avalanche Tested




Application

·Primary Side Switch In:
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules




Pinout

Connection Diagram




Specifications

Parameter
Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 250 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 3.0 2.1 A
TA = 70 2.4 1.7
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 2.6 1.3
Avalanch Current L = 0.1 mH IAS 13
Single Avalanche Energy L = 0.1 mH EAS 8.4 mJ
Maximum Power Dissipationa TA = 25 PD 3.1 1.56 W
TA = 70 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150





Description

N-Channel 250-V (D-S) MOSFET Si4434DY




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more